MSM512100

The MSM512100 is a 2,097,152-word*1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM512100/L achieves high integration, high-speed operation, and low power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The features of it are as follows: (1)2,097,152-word * 1-bit configuration; (2)single 5 V power supply, ±10% tolerance; (3)input : TTL compatible, low input capacitance; (4)output : TTL compatible, 3-state; (5)refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version); (6)fast page mode, read modify write capability; (7)CAS before RAS refresh, hidden refresh, RAS-only refresh capability; (8)multi-bit test mode capability; (9)package: 26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (product : MSM512100/L-xxSJ) xx indicates speed rank.

The absolute maximum ratings of the MSM512100 are: (1)Voltage on Any Pin Relative to VSS: 1.0 to 7.0V; (2Short Circuit Output Current: 50mA; (3)Power Dissipation: 1W; (4)Operating Temperature: 0 to 70; (5)Storage Temperature: 55 to 150.

The following is about the electrical characteristics of MSM512100: (1)output high voltage: 2.4V min at IOH = -5.0 mA; (2)output low voltage: 0.4V max at IOL = 4.2 mA; (3)input leakage current: -10A min and 10A max at 0 V VI 6.5 V, All other pins not under test = 0 V; (4)output leakage current: -10A min and 10A max at dout disable 0 V VO 5.5 V; (5)average power supply current (operating): 80mA max at RAS, CAS cycling, tRC = Min.; (6)power supply current (standby): 2mA max at RAS, CAS = VIH; (7)average power supply current (RAS-only Refresh): 80mA max at RAS cycling; (8)power supply current (standby): 5mA max at RAS = VIH, CAS = VIL, DOUT = enable; (9)average power supply current (CAS before RAS refresh): 80mA max at RAS cycling, CAS before RAS; (10)average power supply current (fast page mode): 60mA max at RAS = VIL, CAS cycling, tPC = Min; (11)average power supply current (battery backup): 200A at  tRC = 125s, CAS before RAS, tRAS 1s.