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MSG36D42

Features: ·Compatible between high breakdown voltage and high cutoff frequency·Low-noise, high-gain amplififi cation·Two elements incorporated into one package (Each transistor is separated)·SSSMini type package, reduction of the mounting area and assembly costSpecifications Parameter Symbol...

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SeekIC No. : 004428098 Detail

MSG36D42: Features: ·Compatible between high breakdown voltage and high cutoff frequency·Low-noise, high-gain amplififi cation·Two elements incorporated into one package (Each transistor is separated)·SSSMini...

MSG36D42 Data Sheet

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Part Number:
MSG36D42
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Compatible between high breakdown voltage and high cutoff frequency
·Low-noise, high-gain amplififi cation
·Two elements incorporated into one package (Each transistor is separated)
·SSSMini type package, reduction of the mounting area and assembly cost


Specifications

Parameter Symbol Rating Unit
Tr1 Collector-base voltage
(Emitter open)
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)

VEBO
0
V
Collector current
IC
100
mA
Tr2 Collector-base voltage
(Emitter open)
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)

VEBO
1
V
Collector current
IC
60
mA
Overall Total power dissipation *
PT
125
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Note) Copper plate at the collector is 5.0 mm2 on substrate at 10 mm * 12 mm * 0.8 mm


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