Features: • Compatible between high breakdown voltage and high cutoff frequency• Low-noise, high-gain amplification• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm)Specifications Parameter Symb...
MSG33001: Features: • Compatible between high breakdown voltage and high cutoff frequency• Low-noise, high-gain amplification• Suitable for high-density mounting and downsizing of the equipm...
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• Compatible between high breakdown voltage and high cutoff frequency
• Low-noise, high-gain amplification
• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm)
Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage (Emitter open) |
VCBO |
9 |
V |
Collector-emitter voltage (Base open) |
VCEO |
6 |
V |
Emitter-base voltage (Collector open) |
VEBO |
1 |
V |
Collector current |
IC |
30 |
mA |
Collector power dissipation |
PC |
100 |
mW |
Junction temperature |
Tj |
125 |
°C |
Storage temperature |
Tstg |
−55 to +125 |
°C |