Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 6.0 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 ...
MSC83301: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 6.0 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 3...
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Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (TC 50°C) |
6.0 |
W |
IC |
Device Current* |
200 |
mA |
VCC |
Collector-Supply Voltage* |
30 |
V |
TJ |
Junction Temperature |
200 |
°C |
TSTG |
Storage Temperature |
- 65 to +200 |
°C |
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.