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MSC80186

Application·EMITTER BALLASTED ·CLASS A LINEAR OPERATION ·COMMON EMITTER ·VSWR CAPABILITY 15:1 @ RATED CONDITIONS ·ft 3.2 GHz TYPICAL ·NOISE FIGURE 12.5 dB @ 2 GHz ·POUT = 30.0 dBm MIN.Specifications Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) - W IC Device...

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SeekIC No. : 004427982 Detail

MSC80186: Application·EMITTER BALLASTED ·CLASS A LINEAR OPERATION ·COMMON EMITTER ·VSWR CAPABILITY 15:1 @ RATED CONDITIONS ·ft 3.2 GHz TYPICAL ·NOISE FIGURE 12.5 dB @ 2 GHz ·POUT = 30.0 dBm MIN.Specifications...

MSC80186 Data Sheet

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Part Number:
MSC80186
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Application

·EMITTER BALLASTED
·CLASS A LINEAR OPERATION
·COMMON EMITTER
·VSWR CAPABILITY 15:1 @ RATED CONDITIONS
·ft 3.2 GHz TYPICAL
·NOISE FIGURE 12.5 dB @ 2 GHz
·POUT = 30.0 dBm MIN.


Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation    (see Safe Area) - W
IC Device Bias Current 500 mA
VCE Collector-Emitter Bias Voltage* 20 V
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This MSC80185 is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.




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