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MSC82307

Features: .REFRACTORY\GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT =7.0 W MIN. WITH 9.6 dB GAIN Specifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 50°C) 21.4 W IC Device Current* 1.2 A VCC Co...

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SeekIC No. : 004428013 Detail

MSC82307: Features: .REFRACTORY\GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT =7.0 W MIN. WITH 9.6 dB GAIN Specifications Symbol Parameter Value U...

MSC82307 Data Sheet

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Part Number:
MSC82307
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

.REFRACTORY\GOLD METALLIZATION
·VSWR CAPABILITY 20:1 @ RATED
 CONDITIONS
.HERMETIC STRIPAC® PACKAGE
·POUT = 7.0 W MIN. WITH 9.6 dB GAIN


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*(TC 50°C)
21.4
W
IC Device Current*
1.2
A
VCC Collector-Supply Voltage*
26
V
TJ Junction Temperature (Pulsed RF Operation)
200
TSTG Storage Temperature
65 to 200



Description

The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.

The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.




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