MSC82306 Selling Leads, Price trend, MSC82306 DataSheet download, circuit diagram from SeekIC.com

Features: .REFRACTORY\GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT = 5.5 W MIN. WITH 9.6 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 50°C) 16.7 W IC Device Current* 900 mA VCC C...

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MSC82306: Features: .REFRACTORY\GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT = 5.5 W MIN. WITH 9.6 dB GAINSpecifications Symbol Parameter Value U...

MSC82306 Data Sheet

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Part Number:: MSC82306
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Recent History
What is this?

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Features: • Hermetically Sealed Package• Gold MetallizationSpecifications IC 1.2...
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Application·EMITTER BALLASTED·CLASS A LINEAR OPERATION·COMMON EMITTER·VSWR CAPABILITY 20:1 @ RATED...
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Application·EMITTER BALLASTED ·CLASS A LINEAR OPERATION ·COMMON EMITTER ·VSWR CAPABILITY 15:1 @ RA...

Product Details

Description

Features:

.REFRACTORY\GOLD METALLIZATION
·VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC^® PACKAGE
·P_OUT = 5.5 W MIN. WITH 9.6 dB GAIN

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation*(T_C 50°C)	16.7	W
I_C	Device Current*	900	mA
V_CC	Collector-Supply Voltage^*	26	V
T_J	Junction Temperature	200
T_STG	Storage Temperature	65 to 200

Description

The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.

The MSC82306 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range.

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MSC82306

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