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MSC82302

Features: .REFRACTORY/GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT = 1.8 W MIN. WITH 10.0 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 55°C) 6.0 W IC Device Current* 300 mA VCC C...

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SeekIC No. : 004428010 Detail

MSC82302: Features: .REFRACTORY/GOLD METALLIZATION ·VSWR CAPABILITY 20:1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE ·POUT = 1.8 W MIN. WITH 10.0 dB GAINSpecifications Symbol Parameter Value ...

MSC82302 Data Sheet

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Part Number:
MSC82302
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

.REFRACTORY/GOLD METALLIZATION
·VSWR CAPABILITY 20:1 @ RATED
 CONDITIONS
.HERMETIC STRIPAC® PACKAGE
·POUT = 1.8 W MIN. WITH 10.0 dB GAIN


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*(TC 55°C)
6.0
W
IC Device Current*
300
mA
VCC Collector-Supply Voltage*
26
V
TJ Junction Temperature
200
TSTG Storage Temperature
65 to 200



Description

The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.

The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range.




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