Features: `EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER `VSWR CAPABILITY :1 @ RATED CONDITIONS .ft 1.6 GHz TYPICAL .NOISE FIGURE 15.5 dB @ 2 GHz `POUT = 27 dBm MIN. @ 1.0 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) - W ...
MSC82100: Features: `EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER `VSWR CAPABILITY :1 @ RATED CONDITIONS .ft 1.6 GHz TYPICAL .NOISE FIGURE 15.5 dB @ 2 GHz `POUT = 27 dBm MIN. @ 1.0 GHzSpecifica...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation (see Safe Area) |
- |
W |
IC | Device Bias Current |
200 |
mA |
VCE | Collector-Emitter Bias Voltage* |
20 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The MSC82100 is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.