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MSC82010

Features: `EMITTER BALLASTED`VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =10 W MIN. WITH5.2 dB GAIN @ 2.0 GHz Specifications Symbol Parameter Value Unit PDISS Power Dissipation* 35 W IC Device Current* 1.5 A VCC Collector-Supply Vol...

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SeekIC No. : 004428007 Detail

MSC82010: Features: `EMITTER BALLASTED`VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =10 W MIN. WITH5.2 dB GAIN @ 2.0 GHz Specifications Symbol Parameter Value Unit ...

MSC82010 Data Sheet

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Part Number:
MSC82010
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

`EMITTER BALLASTED
`VSWR CAPABILITY :1 @ RATED
 CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz 


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*
35
W
IC Device Current*
1.5
A
VCC Collector-Supply Voltage*
35
V
TJ Junction Temperature
200
TSTG Storage Temperature
65 to 200



Description

The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.




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