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MSC81450M

Features: .REFRACTORY\GOLD METALLIZATION .RUGGEDIZED VSWR 25:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE ·POUT = 450 W MIN. WITH 7.0 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* 910 W IC Device Cu...

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SeekIC No. : 004428003 Detail

MSC81450M: Features: .REFRACTORY\GOLD METALLIZATION .RUGGEDIZED VSWR 25:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE ·POUT = 450 W MIN. WITH 7.0 dB GAINSpecificatio...

MSC81450M Data Sheet

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Part Number:
MSC81450M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 25:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
·POUT = 450 W MIN. WITH 7.0 dB GAIN


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*
910
W
IC Device Current*
28
A
VCC Collector-Supply Voltage*
55
V
TJ Junction Temperature (Pulsed RF Operation)
250
TSTG Storage Temperature
- 65 to +200



Description

The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications.

This MSC81450M is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions.

The MSC81450M is housed in the unique BIGPAC ™ package with internal input/output matching structures.




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