Features: .REFRACTORY/GOLD METALLIZATION .HIGH GAIN & COLLECTOR EFFICIENCY .RUGGED OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE·POUT = 2.0 W MIN. WITH 10.0 dB GAISpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 50°C) 6 W IC Device Current* ...
MSC81402: Features: .REFRACTORY/GOLD METALLIZATION .HIGH GAIN & COLLECTOR EFFICIENCY .RUGGED OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE·POUT = 2.0 W MIN. WITH 10.0 dB GAISpecifications Symbol ...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation*(TC 50°C) |
6 |
W |
IC | Device Current* |
0.23 |
A |
VCC | Collector-Supply Voltage* |
30 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81402 is a 28 Volt, Class C, common base NPN biploar device designed for general purpose amplifier applications in the UHF and L-Band frequency range.
High gain and collector efficiency along with extreme ruggedness are obtained using a gold metallized emitter-ballasted overlay die geometry.