MSC81350M Selling Leads, Price trend, MSC81350M DataSheet download, circuit diagram from SeekIC.com

Features: .REFRACTORY/GOLD METALLIZATION.RUGGEDIZED VSWR 20:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE·POUT = 350 W MIN. WITH 7.0 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 55°C) 720 W IC De...

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SeekIC No. : 004428000 Detail

MSC81350M: Features: .REFRACTORY/GOLD METALLIZATION.RUGGEDIZED VSWR 20:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE·POUT = 350 W MIN. WITH 7.0 dB GAINSpecifications...

MSC81350M Data Sheet

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Part Number:: MSC81350M
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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Recent History
What is this?

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Product Details

Description

Features:

.REFRACTORY/GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
·P_OUT = 350 W MIN. WITH 7.0 dB GAIN

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation*(T_C 55°C)	720	W
I_C	Device Current*	19.8	A
V_CC	Collector-Supply Voltage^*	55	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	65 to 200

Description

The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications.

This MSC81350M is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.

The MSC81350M is housed in the unique AMPAC™ package with internal input/output matching structures.

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MSC81350M

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