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MSC81325M

Features: .REFRACTORY/GOLD METALLIZATION .EMITTER BALLASTED .RUGGEDIZED VSWR :1 .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE` POUT = 325 W MIN. WITH 6.7 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 100°C) 880 W I...

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SeekIC No. : 004427999 Detail

MSC81325M: Features: .REFRACTORY/GOLD METALLIZATION .EMITTER BALLASTED .RUGGEDIZED VSWR :1 .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE` POUT = 325 W MIN. WITH 6.7 dB GAINSpecificat...

MSC81325M Data Sheet

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Part Number:
MSC81325M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

.REFRACTORY/GOLD METALLIZATION
.EMITTER BALLASTED
.RUGGEDIZED VSWR :1
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
` POUT = 325 W MIN. WITH 6.7 dB GAIN


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*(TC 100°C)
880
W
IC Device Current*
24
A
VCC Collector-Supply Voltage*
55
V
TJ Junction Temperature (Pulsed RF Operation)
250
TSTG Storage Temperature
65 to 200



Description

The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This MSC81325M is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.

The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.




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