Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =2.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 75°C) 6.25 W IC Device Current*...
MSC81118: Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =2.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol ...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation*(TC 75°C) |
6.25 |
W |
IC | Device Current* |
200 |
mA |
VCC | Collector-Supply Voltage* |
35 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81118 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This MSC81118 is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
The MSC81118 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.