Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 50°C) 18.75 W IC Device Current...
MSC81111: Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol ...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation*(TC 50°C) |
18.75 |
W |
IC | Device Current* |
600 |
mA |
VCC | Collector-Supply Voltage* |
35 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This MSC81111 is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.