MSC81111

Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation*(TC 50°C) 18.75 W IC Device Current...

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MSC81111 Picture
SeekIC No. : 004427996 Detail

MSC81111: Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT =5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol ...

floor Price/Ceiling Price

Part Number:
MSC81111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
 CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz
 


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*(TC 50°C)
18.75
W
IC Device Current*
600
mA
VCC Collector-Supply Voltage*
35
V
TJ Junction Temperature
200
TSTG Storage Temperature
65 to 200



Description

The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This MSC81111 is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.




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