Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* 29 W IC Device Current* 1.0 ...
MSC81058: Features: `EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION `VSWR CAPABILITY :1 @ RATEDCONDITIONS .HERMETIC STRIPAC® PACKAGE `POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol ...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation* |
29 |
W |
IC | Device Current* |
1.0 |
A |
VCC | Collector-Supply Voltage* |
35 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This MSC81058 is capable of withstanding infinite load VSWR at any phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.