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MSC81035MP

Features: . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE. INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE` POUT = 35 W MIN. WITH 10.7 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation...

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SeekIC No. : 004427994 Detail

MSC81035MP: Features: . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE. INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE` POUT = 35 W MIN....

MSC81035MP Data Sheet

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Part Number:
MSC81035MP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. :1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
. INPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
` POUT = 35 W MIN. WITH 10.7 dB GAIN


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation* (TC 100°C)
150
W
IC Device Current*
3.0
A
VCC Collector-Supply Voltage (Pulsed RF Operation)
55
V
TJ Junction Temperature
250
TSTG Storage Temperature
65 to 150



Description

The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This MSC81035MP is a direct replacement for the MSC1035MP. MSC81035MP offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

Low RFthermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The MSC81035MP is housed in the IMPAC™ package with internal input matching.




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