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MSC81035M

Features: . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE. INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE` POUT = 35 W MIN. WITH 10.7 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation...

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SeekIC No. : 004427993 Detail

MSC81035M: Features: . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE. INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE` POUT = 35 W MIN....

MSC81035M Data Sheet

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Part Number:
MSC81035M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. :1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
. INPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
` POUT = 35 W MIN. WITH 10.7 dB GAIN




Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation* (TC 100°C)
150
W
IC Device Current*
3.0
A
VCC Collector-Supply Voltage (Pulsed RF Operation)
55
V
TJ Junction Temperature
250
TSTG Storage Temperature
65 to 200



Description

The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described erein.

Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The MSC81035M is housed in the IMPAC™ package with internal input matching.




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