Features: . EMITTER BALLASTED · REFRACTORY/GOLD METALLIZATION CONDITIONS.LOW THERMAL RESISTANCE·HERMETIC STRIPAC®PACKAGE·POUT =20 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* 35 W IC Device Current* 1.50 A ...
MSC81020: Features: . EMITTER BALLASTED · REFRACTORY/GOLD METALLIZATION CONDITIONS.LOW THERMAL RESISTANCE·HERMETIC STRIPAC®PACKAGE·POUT =20 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parame...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation* |
35 |
W |
IC | Device Current* |
1.50 |
A |
VCC | Collector-Supply Voltage* |
35 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.