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MSC81010

Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS.HERMETIC STRIPAC®PACKAGE`POUT =10 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* 29 W IC Device Current* 1.0 A VCC Collector-Supply Volt...

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SeekIC No. : 004427989 Detail

MSC81010: Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS.HERMETIC STRIPAC®PACKAGE`POUT =10 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PD...

MSC81010 Data Sheet

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Part Number:
MSC81010
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

. EMITTER BALLASTED
` VSWR CAPABILITY :1 @ RATED 
  CONDITIONS
.HERMETIC STRIPAC®PACKAGE
`POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz 


Specifications

Symbol Parameter
Value
Unit
PDISS Power Dissipation*
29
W
IC Device Current*
1.0
A
VCC Collector-Supply Voltage*
35
V
TJ Junction Temperature
200
TSTG Storage Temperature
65 to 200
<TA


Description

The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions.

The MSC81010 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.




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