MSC81005 Selling Leads, Price trend, MSC81005 DataSheet download, circuit diagram from SeekIC.com

Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS.HERMETIC STRIPAC®PACKAGE`POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 18.75 W IC Device Current* 600 mA VCC Colle...

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SeekIC No. : 004427987 Detail

MSC81005: Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS.HERMETIC STRIPAC®PACKAGE`POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHzSpecifications Symbol Parameter Value Unit ...

MSC81005 Data Sheet

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Part Number:: MSC81005
Supply Ability:: 5000

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Upload time: 2024/11/26

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Product Details

Description

Features:

. EMITTER BALLASTED
` VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC®PACKAGE
`P_OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (TC 50°C)	18.75	W
I_C	Device Current*	600	mA
V_CC	^{Collector-Supply Voltage*}	35	V
T_J	Junction Temperature	200
T_STG	Storage Temperature	65 to 200

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Description

The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81005 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.

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MSC81005

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