Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS .HERMETIC STRIPAC®PACKAGE`POUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHzPinout Symbol Parameter Value Unit PDISS Power Dissipation* (TC 75°C) 6.25 W IC Device Current* 200 mA VCC Collector-Sup...
MSC81002: Features: . EMITTER BALLASTED ` VSWR CAPABILITY :1 @ RATED CONDITIONS .HERMETIC STRIPAC®PACKAGE`POUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHzPinout Symbol Parameter Value Unit PDISS ...
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Symbol | Parameter |
Value |
Unit |
PDISS | Power Dissipation* (TC 75°C) |
6.25 |
W |
IC | Device Current* |
200 |
mA |
VCC | Collector-Supply Voltage* |
35 |
V |
TJ | Junction Temperature |
200 |
|
TSTG | Storage Temperature |
65 to 200 |
The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
The MSC81002 was designed for Class Camplifier applications in the 0.4 - 1.2 GHz frequency range.