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MSC1350M

Features: · 1090 MHz· COMMON BASE· GOLD METALLIZATION· CLASS C OPERATION· POUT = 350 W MIN. WITH 7.0 dB GAIN· WITHSTANDS 20:1 VSWR UNDER FULL LOADSpecifications Symbol Parameter Value Unit VCC Collector-Supply Voltage* 55 V IC Device Current* 19.8 A PDISS Power Dissipation*...

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SeekIC No. : 004427838 Detail

MSC1350M: Features: · 1090 MHz· COMMON BASE· GOLD METALLIZATION· CLASS C OPERATION· POUT = 350 W MIN. WITH 7.0 dB GAIN· WITHSTANDS 20:1 VSWR UNDER FULL LOADSpecifications Symbol Parameter Value Unit ...

MSC1350M Data Sheet

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Part Number:
MSC1350M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· 1090 MHz
· COMMON BASE
· GOLD METALLIZATION
· CLASS C OPERATION
· POUT = 350 W MIN. WITH 7.0 dB GAIN
· WITHSTANDS 20:1 VSWR UNDER FULL LOAD


Specifications

Symbol Parameter Value Unit
VCC Collector-Supply Voltage* 55 V
IC Device Current* 19.8 A
PDISS Power Dissipation* 720 W
TJ Junction Temperature 200 °C
TSTG Storage Temperature -65 to +200 °C



Description

THE MSC1350M IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY DESIGNED FOR IFF AVIONICS APPLICATIONS. GOLD METALLIZATION AND EMITTER BALLASTING ASSURE HIGH RELIABILITY UNDER CLASS A LINEAR AMPLIFIER OPERATION. THE DEVICE IS CAPABLE OF WITHSTANDING A 20:1 VSWR AT ALL PHASE ANGLES UNDER FULL LOAD CONDITIONS.




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