Features: ` 1025 1150 MHz` 50 VOLTS` INTERNAL INPUT/OUTPUT MATCHING` POUT = 175 WATTS` GP = 7.7 dB MINIMUM` COMMON BASE CONFIGURATIONSpecifications Symbol Parameter Value Unit PDISS Power Dissipation 400 W IC Device Current 12 A VCC Collector-Supply Vol...
MSC1175M: Features: ` 1025 1150 MHz` 50 VOLTS` INTERNAL INPUT/OUTPUT MATCHING` POUT = 175 WATTS` GP = 7.7 dB MINIMUM` COMMON BASE CONFIGURATIONSpecifications Symbol Parameter Value Unit PD...
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Features: ·Each channel is independently programmable via DASM software.·Factory set input filters...
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation |
400 |
W |
IC |
Device Current |
12 |
A |
VCC |
Collector-Supply Voltage* |
55 |
V |
TJ |
Junction Temperature |
250 |
°C |
TSTG |
Storage Temperature |
-65 to +200 |
°C |
The MSC1175M is a NPN bipolar transistor specifically designed for high peak pulse power applications such as DME/TACAN. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance.