MSB710-RT1G, US $ .03-.07 , ON Semiconductor, MSB710-RT1G DataSheet download, circuit diagram from SeekIC.com

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MSB710-RT1G: Transistors Bipolar (BJT) 500mA 60V PNP

MSB710-RT1G Data Sheet

US $ .03~.07 / Piece | Get Latest Price

Part Number:: MSB710-RT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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What is this?

MSB709RT1 evaluate
Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 60 ...
MSB709-RT1G evaluate
US $.03 - .1 / Piece

Transistors Bipolar (BJT) 100mA 60V PNP
MSB710QT1 evaluate
Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO -60 ...

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	120 at 150 mA at 10 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-59	Packaging :	Reel

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Package / Case : SC-59
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 120 at 150 mA at 10 V

Parameters:

Technical/Catalog Information	MSB710-RT1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	600mV @ 30mA, 300mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MSB710 RT1G MSB710RT1G

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