Transistors Bipolar (BJT) 100mA 60V PNP
MSB709-RT1G: Transistors Bipolar (BJT) 100mA 60V PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.1 A | ||
DC Collector/Base Gain hfe Min : | 210 at 2 mA at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-59 | Packaging : | Reel |
Technical/Catalog Information | MSB709-RT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MSB709 RT1G MSB709RT1G MSB709 RT1GOSTR ND MSB709RT1GOSTRND MSB709-RT1GOSTR |