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MSASC150H45A

Features: · Platinum/Tungsten schottky barrier for low forward voltage drop· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface...

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MSASC150H45A: Features: · Platinum/Tungsten schottky barrier for low forward voltage drop· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· ...

MSASC150H45A Data Sheet

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Part Number:
MSASC150H45A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Platinum/Tungsten schottky barrier for low forward voltage drop
· Oxide passivated structure for very low leakage currents
· Guard ring protection for increased reverse energy capability
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS) screening i.a.w. Microsemi Internal Procedure PS 11.50 available


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR 45 Volts
Average Rectified Forward Current, Tc 135 IF(ave) 150 Amps
derating, forward current, Tc 135 dIF/dT (3.75) Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 500 Amps
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -65 to +175
Storage Temperature Range Tstg -65 to +175
Thermal Resistance, Junction to Case JC 0.25 /W



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