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MSASC100H45H

Features: · Tungsten/Platinum schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low pac...

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MSASC100H45H: Features: · Tungsten/Platinum schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes...

MSASC100H45H Data Sheet

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Part Number:
MSASC100H45H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Tungsten/Platinum schottky barrier
· Oxide passivated structure for very low leakage currents
· Guard ring protection for increased reverse energy capability
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, MSASC100H45H) and reverse polarity (strap-to-cathode: MSASC100H45HR)


Specifications

DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
45
Volts
Working Peak Reverse Voltage
VRWM
45
Volts
DC Blocking Voltage
VR
45
Volts
Average Rectified Forward Current, Tc145°C
IF(ave)
100
Amps
derating, forward current, Tc145°C
dIF/dT
4
Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 s, half-sinewave
IFSM
500
Amps
Peak Repetitive Reverse Surge Current, tp= 1ms, f= 1kHz
IRRM
2
Amp
Junction Temperature Range
Tj
-65 to +150
Storage Temperature Range
Tstg
-65 to +150
Thermal Resistance, Junction to Case: MSASC100W45H
MSASC100W45HR
JC
0.35
0.5
/W



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