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MSASC100W100HR

Features: · Tungsten schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low package indu...

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MSASC100W100HR: Features: · Tungsten schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward ...

MSASC100W100HR Data Sheet

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Part Number:
MSASC100W100HR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Tungsten schottky barrier
· Oxide passivated structure for very low leakage currents
· Guard ring protection for increased reverse energy capability
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, MSASC100W100H) and reverse polarity (strap-to-cathode: MSASC100W100HR)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 100 Volts
Working Peak Reverse Voltage VRWM 100 Volts
DC Blocking Voltage VR 100 Volts
Average Rectified Forward Current, Tc 125 IF(ave) 100 Amps
derating, forward current, Tc 125 dIF/dT 2.5 Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 500 Amps
Peak Repetitive Reverse Surge Current, tp= 1ms, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -55 to +175
Storage Temperature Range Tstg -55 to +175
Thermal Resistance, Junction to Case:
MSASC100W100H
MSASC100W100HR		 JC 0.35
0.5		 /W



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