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MSAHX75L60C

Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon request: MSAHX75L60D· low VCE(sat) IGBT, low conduction lossesSp...

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MSAHX75L60C: Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistan...

MSAHX75L60C Data Sheet

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Part Number:
MSAHX75L60C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Rugged polysilicon gate cell structure
· high current handling capability, latch-proof
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request: MSAHX75L60D
· low VCE(sat) IGBT, low conduction losses


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ25°C		 BVCES 600 Volts
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 W BVCGR 600 Volts
Continuous Gate-to-Emitter Voltage VGES +/-20 Volts
Transient Gate-to-Emitter Voltage VGEM +/-30 Volts
Continuous Collector Current Tj= 25°C
Tj=90°C		 IC25
IC90		 75
60		 Amps
Peak Collector Current, pulse width limited by Tjmax, ICM 200 Amps
Safe Operating Area (RBSOA) @ VGE= 15V, L= 30H (clamped inductive
load), RG= 2.7W, Tj= 125°C, VCE= 0.8 * VCES		 Imax 100 Amps
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Thermal Resistance, Junction to Case JC 0.25 °C/W



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