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MSAHX60F60A

Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon request: MSAH(G)60F60B· high frequency IGBT, low switching losse...

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SeekIC No. : 004427550 Detail

MSAHX60F60A: Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistan...

MSAHX60F60A Data Sheet

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Part Number:
MSAHX60F60A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Rugged polysilicon gate cell structure
· high current handling capability, latch-proof
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request: MSAH(G)60F60B
· high frequency IGBT, low switching losses
· anti-parallel FREDiode (MSAHX60F60A only)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ25°C		 BVCES 600 Volts
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 W BVCGR 600 Volts
Continuous Gate-to-Emitter Voltage VGES +/-20 Volts
Transient Gate-to-Emitter Voltage VGEM +/-30 Volts
Continuous Collector Current Tj= 25°C
Tj=90°C		 IC25
IC90		 60
32		 Amps
Peak Collector Current, pulse width limited by Tjmax, ICM 120 Amps
Safe Operating Area (RBSOA) @ VGE= 15V, L= 100mH (clamped inductive
load), RG= 4.7W, Tj= 125°C, VCE= 0.8 * VCES		 Imax 64 Amps
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode, MSAHX60F60A only) IS 32 Amps
Pulse Source Current (Body Diode, MSAHX60F60A only) ISM 100 Amps
Thermal Resistance, Junction to Case JC 0.4 °C/W



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