Transistors Bipolar (BJT) 100mA 60V PNP
MSA1162GT1G: Transistors Bipolar (BJT) 100mA 60V PNP
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Specifications Rating Symbol Value Unit Collector-Base Voltage VCBO -30 Vdc Co...
Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 200 at 2 mA at 6 V | Configuration : | Single |
Maximum Operating Frequency : | 80 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SC-59 |
Packaging : | Reel |
Technical/Catalog Information | MSA1162GT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Frequency - Transition | 80MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MSA1162GT1G MSA1162GT1G MSA1162GT1GOSTR ND MSA1162GT1GOSTRND MSA1162GT1GOSTR |