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MSA1162GT1

Transistors Bipolar (BJT) 100mA 60V PNP

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SeekIC No. : 00213479 Detail

MSA1162GT1: Transistors Bipolar (BJT) 100mA 60V PNP

MSA1162GT1 Data Sheet

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Part Number:
MSA1162GT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V Configuration : Single
Maximum Operating Frequency : 80 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-59-3
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Maximum Operating Frequency : 80 MHz
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V
Package / Case : SC-59-3


Specifications

Rating Symbol Value Unit
Collector−Base Voltage V(BR)CBO 60 Vdc
Collector−Emitter Voltage V(BR)CEO 50 Vdc
Emitter−Base Voltage V(BR)EBO 7.0 Vdc
Collector Current − Continuous IC 100 mAdc
Collector Current − Peak IC(P) 200 mAdc



Parameters:

Technical/Catalog InformationMSA1162GT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Frequency - Transition80MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MSA1162GT1
MSA1162GT1
MSA1162GT1OS ND
MSA1162GT1OSND
MSA1162GT1OS



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