MRFG35020AR1

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 5 V
Package / Case : NI-360


Description

The MRFG35020AR1 is gallium arsenide PHEMT. It is designed WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. The device is suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications.

The features of MRFG35020AR1 can be summarized as:(1)Supports up to 28 MHz Bandwidth OFDM Signals; (2)Internally Input Matched for Ease of Use; (3)High Gain, High Efficiency and High Linearity; (4)Excellent Thermal Stability; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

The absolute maximum ratings of MRFG35020AR1 are:(1)Drain-Source Voltage:15Vdc; (2)Gate-Source Voltage:-5Vdc; (3)RF Input Power:34dBm; (4)Storage Temperature Range:-40°C to +150 °C; (5)Channel Temperature:175 °C.

If you want to know more information such as the electrical characteristics about the MRFG35020AR1, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	MRFG35020AR1
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	pHEMT FET
Voltage - Rated	12V
Current Rating	300mA
Package / Case	NI-360
Packaging	Tape & Reel (TR)
Drawing Number	375; 360E-01; AR; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRFG35020AR1 MRFG35020AR1