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MRFG35002N6AT1

Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5

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SeekIC No. : 00219203 Detail

MRFG35002N6AT1: Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5

MRFG35002N6AT1 Data Sheet

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Part Number:
MRFG35002N6AT1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Technology Type : pHEMT Frequency : 3.55 GHz
Gain : 10 dB Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 5 V Continuous Drain Current : 1.7 A
Maximum Operating Temperature : + 85 C Mounting Style : SMD/SMT
Package / Case : PLD-1.5    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Power Dissipation :
Mounting Style : SMD/SMT
Technology Type : pHEMT
Gate-Source Breakdown Voltage : - 5 V
Frequency : 3.55 GHz
Maximum Operating Temperature : + 85 C
Package / Case : PLD-1.5
Gain : 10 dB
Continuous Drain Current : 1.7 A
Drain Source Voltage VDS : 8 V


Features:

• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-source voltage VDSS 8 Vdc
Gate-source voltage VGSS -5 Vdc
Storage temperature range Pin 22 dBm
Storage temperature range Tstg -65 to +150
Channel temperature(1) Tch 175



Parameters:

Technical/Catalog InformationMRFG35002N6AT1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypepHEMT FET
Voltage - Rated 6V
Current Rating65mA
Package / CasePLD-1.5
PackagingTape & Reel (TR)
Drawing Number375; 466-03 ; T; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRFG35002N6AT1
MRFG35002N6AT1



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