Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5
MRFG35002N6AT1: Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5
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Technology Type : | pHEMT | Frequency : | 3.55 GHz |
Gain : | 10 dB | Drain Source Voltage VDS : | 8 V |
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 1.7 A |
Maximum Operating Temperature : | + 85 C | Mounting Style : | SMD/SMT |
Package / Case : | PLD-1.5 |
Rating | Symbol | Value | Unit |
Drain-source voltage | VDSS | 8 | Vdc |
Gate-source voltage | VGSS | -5 | Vdc |
Storage temperature range | Pin | 22 | dBm |
Storage temperature range | Tstg | -65 to +150 | |
Channel temperature(1) | Tch | 175 |
Technical/Catalog Information | MRFG35002N6AT1 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 6V |
Current Rating | 65mA |
Package / Case | PLD-1.5 |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 466-03 ; T; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFG35002N6AT1 MRFG35002N6AT1 |