Transistors RF GaAs 3.5GHZ 10W GAAS NI360HF
MRFG35010AR1: Transistors RF GaAs 3.5GHZ 10W GAAS NI360HF
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Technology Type : | pHEMT | Frequency : | 3.55 GHz |
Gain : | 10 dB | Drain Source Voltage VDS : | 15 V |
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 2.9 A |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Screw |
Package / Case : | NI-360HF |