Transistors RF GaAs 3.5GHZ 10W GAAS PLD1.5N
MRFG35010ANR5: Transistors RF GaAs 3.5GHZ 10W GAAS PLD1.5N
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Technology Type : | pHEMT | Frequency : | 3.55 GHz |
Gain : | 10 dB | Drain Source Voltage VDS : | 15 V |
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 2.9 A |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | PLD-1.5 |
Technical/Catalog Information | MRFG35010ANR5 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 12V |
Current Rating | 140mA |
Package / Case | NI-360HF |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFG35010ANR5 MRFG35010ANR5 MRFG35010ANR5CT ND MRFG35010ANR5CTND MRFG35010ANR5CT |