MRFG35010A

The MRFG35010A is RF Power Field Effect Transistor. It is designed for WiMAX, WLL/MMDS or UMTS driver and final applications. The device is unmatched and is suitable for use in Class AB or Class A linear base station applications.

The features of MRFG35010A can be summarized as:(1)10 Watts P1dB @ 3550 MHz, CW; (2)Excellent Phase Linearity and Group Delay Characteristics; (3)High Gain, High Efficiency and High Linearity; (4)RoHS Compliant; (5)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

The absolute maximum ratings of MRFG35010A are:(1)Drain-Source Voltage:15 Vdc; (2)Gate-Source Voltage:-5 Vdc; (3)RF Input Power:33 dBm; (4)Storage Temperature Range:-65°C to +150 °C; (5)Channel Temperature:175 °C.

The electrical characteristics of the MRFG35010A are:(1)saturated drain current(VDS=3.5V, VGS=0V):2.9A;(2)off state leakage current(VGS=-0.4V, VDS=0V):100uA;(3)off state drain current(VDS=12V, VGS=-2.2V):0.09mA to 1mA;(4)off state current(VDS=28.5V, VGS=-2.5V):5mA to 15mA;(5)gate-source cut-off voltage(VDS=3.5V, IDS=15mA):-1.2V to -0.7V;(6)quiescent gate voltage(VDS=12V, ID=180mA):-1.2V to -0.7V.

If you want to know more information such as the electrical characteristics about the MRFG35010A, please download the datasheet in www.seekic.com or www.chinaicmart.com .