Transistors RF GaAs 3.5GHZ 3W 6V GAAS PLD1.5
MRFG35003N6AT1: Transistors RF GaAs 3.5GHZ 3W 6V GAAS PLD1.5
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Technology Type : | pHEMT | Frequency : | 3.55 GHz |
Gain : | 10 dB | Drain Source Voltage VDS : | 8 V |
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 2.9 A |
Maximum Operating Temperature : | + 85 C | Mounting Style : | SMD/SMT |
Package / Case : | PLD-1.5 |
Technical/Catalog Information | MRFG35003N6AT1 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 6V |
Current Rating | 180mA |
Package / Case | PLD-1.5 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFG35003N6AT1 MRFG35003N6AT1 |