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SeekIC No. : 003434920 Detail

MRFG35003M6T1: MOSFET RF 3.5GHZ 3W 6V 1.5-PLD

MRFG35003M6T1 Data Sheet

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Part Number:: MRFG35003M6T1
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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MRFG35002N6AT1 evaluate
Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5
MRFG35002N6R5 evaluate
TRANSISTOR RF 1.5W 6V POWER FET
MRFG35002N6T1 evaluate
US $3.68 - 3.68 / Piece

TRANSISTOR RF FET 3.5GHZ PLD-1.5

Product Details

Quick Details

Series:	-	Manufacturer:	Freescale Semiconductor
Continuous Collector Current :	5 mA	Transistor Type:	pHEMT FET
Frequency:	3.55GHz	Gain:	9dB
Voltage - Test:	6V	Current Rating:	2.9A
Noise Figure:	-	Current - Test:	180mA
Power - Output:	3W	Voltage - Rated:	8V
Package / Case:	PLD-1.5	Supplier Device Package:	PLD-1.5

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: pHEMT FET
Gain: 9dB
Manufacturer: Freescale Semiconductor
Power - Output: 3W
Package / Case: PLD-1.5
Supplier Device Package: PLD-1.5
Voltage - Rated: 8V
Current - Test: 180mA
Frequency: 3.55GHz
Voltage - Test: 6V
Current Rating: 2.9A

Features:

• Typical WCDMA Performance: 42 dBc ACPR, 3.55 GHz, 6 Volts,
   I_DQ = 180 mA
       Output Power - 450 mWatts
       Power Gain - 9 dB
       Efficiency - 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_DSS	8	Vdc
Total Device Dissipation @ T_C = 25 Derate above 25	P_D	22.7⁽²⁾0.15⁽²⁾	Watts W/
GateSource Voltage	V_GS	5	Vdc
RF Input Power	P_in	24	dBm
Storage Temperature Range	T_stg	65 to +150
Channel Temperature⁽¹⁾	T_ch	175
Operating Case Temperature Range	T_C	20 to +85

Description

MRFG35003M6T1 is Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.

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MRFG35003M6T1

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