MPSW55

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
DC Collector/Base Gain hfe Min : 100 at 50 mA at 1 V


Specifications

Rating	Symbol	MPSW55	MPSW56	Unit
CollectorEmitter Voltage	VCES	-60	-80	Vdc
CollectorBase Voltage	VCBO	-60	-80	Vdc
EmitterBase Voltage	VEBO	-4.0		Vdc
Collector Current - Continuous	IC	-500		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	1.0 8.0		Watts mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	2.5 20		Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150		°C

Parameters:

Technical/Catalog Information	MPSW55
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 250mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226 Variation (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPSW55 MPSW55