MPSW01

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-226


Specifications

Rating	Symbol	Value		Unit
Collector¤CEmitter Voltag MPSW01 MPSW01A	VCEO	30 40		Vdc
Collector¤CBase Voltag MPSW01 MPSW01A	VCBO	40 50		Vdc
Emitter-Base Voltag	VEBO	5.0		Vdc
Collector Current - Continuou	IC	1000		mAdc
Total Device Dissipation @ TA = 25 Derate above 25	PD	1.0 8.0		Watts mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	2.5 20		Watts mW/
Operating and Storage Junction Temperature Range	TJ , Tstg	-55to+150

Parameters:

Technical/Catalog Information	MPSW01
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSW01 MPSW01 MPSW01FS ND MPSW01FSND MPSW01FS