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MPSW01: Transistors Bipolar (BJT) NPN Transistor General Purpose

MPSW01 Data Sheet

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Part Number:: MPSW01
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/9/25

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Product Details

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	60	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-226
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-226

Specifications

Rating	Symbol	Value	Unit
Collector¤CEmitter Voltag MPSW01 MPSW01A	V_CEO	30 40	Vdc
Collector¤CBase Voltag MPSW01 MPSW01A	V_CBO	40 50	Vdc
Emitter-Base Voltag	V_EBO	5.0	Vdc
Collector Current - Continuou	I_C	1000	mAdc
Total Device Dissipation @ T_A = 25 Derate above 25	P_D	1.0 8.0	Watts mW/
Total Device Dissipation @ T_C = 25 Derate above 25	P_D	2.5 20	Watts mW/
Operating and Storage Junction Temperature Range	T_J , T_stg	-55to+150

Parameters:

Technical/Catalog Information	MPSW01
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSW01 MPSW01 MPSW01FS ND MPSW01FSND MPSW01FS

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MPSW01

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