MPSW51 Selling Leads, Price trend , ON Semiconductor, MPSW51 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00212263 Detail

MPSW51: Transistors Bipolar (BJT) 1A 40V 1W PNP

MPSW51 Data Sheet

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Part Number:: MPSW51
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/26

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What is this?

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Transistors Bipolar (BJT) NPN Transistor General Purpose
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Transistors Bipolar (BJT) NPN Gen Purp Amp

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	30 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	55 at 10 mA at 1 V	Configuration :	Single
Maximum Operating Frequency :	50 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 50 MHz (Min)
Maximum DC Collector Current : 1 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 55 at 10 mA at 1 V

Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage MPSW51 MPSW51A	V_CES	-30 -40	Vdc
CollectorBase Voltage MPSW51 MPSW51A	V_CBO	-40 -50	Vdc
EmitterBase Voltage	V_EBO	-5.0	Vdc
Collector Current - Continuous	I_C	-1000	mAdc
Total Device Dissipation @ T_A = 25°C Derate above 25°C	P_D	1.0 8.0	Watts mW/°C
Total Device Dissipation @ T_C= 25°C Derate above 25°C	P_D	2.5 20	Watts mW/°C
Operating and Storage Junction Temperature Range	T_J, T_stg	55 to +150	°C

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MPSW51

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