MPSW06RLRA

Transistors Bipolar (BJT) 500mA 80V 1W NPN

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SeekIC No. : 00213321 Detail

MPSW06RLRA: Transistors Bipolar (BJT) 500mA 80V 1W NPN

floor Price/Ceiling Price

Part Number:
MPSW06RLRA
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz (Min)
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V


Parameters:

Technical/Catalog InformationMPSW06RLRA
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)500mA
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 10mA, 250mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)500nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226 Variation (Formed Leads)
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MPSW06RLRA
MPSW06RLRA
MPSW06RLRAOSCT ND
MPSW06RLRAOSCTND
MPSW06RLRAOSCT



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