Transistors Bipolar (BJT) 500mA 80V 1W NPN
MPSW06RLRA: Transistors Bipolar (BJT) 500mA 80V 1W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | 4 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 80 at 50 mA at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 50 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Reel |
Technical/Catalog Information | MPSW06RLRA |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 50mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 250mA |
Frequency - Transition | 50MHz |
Current - Collector Cutoff (Max) | 500nA |
Mounting Type | Through Hole |
Package / Case | TO-92-3, TO-226 Variation (Formed Leads) |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MPSW06RLRA MPSW06RLRA MPSW06RLRAOSCT ND MPSW06RLRAOSCTND MPSW06RLRAOSCT |