MPSW06

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum Operating Frequency : 100 MHz
Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
Package / Case : TO-226


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	80	Vdc
CollectorBase Voltage	VCBO	80	Vdc
EmitterBase Voltage	VEBO	4.0	Vdc
Collector Current - Continuous	IC	500	mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	1.0 8.0	mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	2.5 20	Watts mW/°C
Operating and Storage Junction Temperature Range	TJ,Tstg	55 to +150	°C

Parameters:

Technical/Catalog Information	MPSW06
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	500mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 10mA, 250mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226 Variation (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPSW06 MPSW06 MPSW06OS ND MPSW06OSND MPSW06OS