MPS8599

Transistors Bipolar (BJT) 500mA 80V PNP

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SeekIC No. : 00213414 Detail

MPS8599: Transistors Bipolar (BJT) 500mA 80V PNP

floor Price/Ceiling Price

Part Number:
MPS8599
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 at 1 mA at 5 V Configuration : Single
Maximum Operating Frequency : 150 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 at 1 mA at 5 V
Maximum Operating Frequency : 150 MHz (Min)
Packaging : Bulk


Description

The MPS8599 is a kind of PNP epitaxial silicon amplifier transistor. There are some features as follows: (1)collector-emitter voltage: VCEO=80 V; (2)collector dissipation: PC(max)=625 mW.

What comes next is about the absolute maximum ratings of MPS8599 at Ta=25: (1)collector to base voltage, VCBO: 80 V; (2)collector to emitter voltage, VCEO: 80 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 500 mA; (5)collector dissipation, PC: 625 mW; (6)junction temperature, TJ: 150; (7)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of MPS8599 at Ta=25: (1)collector-base breakdown voltage, BVCBO: 80 V min at IC=100A, IE=0; (2)collector-emitter breakdown voltage, BVCEO: 80 V min at IC=10 mA, IB=0; (3)emitter-base breakdown voltage, BVEBO: 5 V min at IE=10A, IC=0; (4)collector cutoff current, ICBO: 100 nA max at VCB=80 V, IE=0; (5)emittor cutoff current, IEBO: 100 nA max at VEB=4 V, IC=0; (6)collector cutoff current, ICEO: 100 nA max at VCE=60 V, IE=0; (7)DC current gain, hFE: 100 min and 300 max at VCE=5 V, IC=1 mA; 100 min at IC=10 mA, VCE=5 V; 75 min at IC=100 mA, VCE=5 V; (8)current gain-bandwidth product, fT: 150 MHz min at VCE=5 V, IC=10 mA, f=100 MHz; (9)output capacitance, cob: 8 pF max at VCB=5 V, f=1 MHz, IE=0; (10)collector-emitter saturation voltage, VCE(sat): 0.4 V max at IC=100 mA, IB=5 mA and 0.3 V max at IC=100 mA, IB=10 mA; (11)base-emitter on voltage, VBE(on): 0.6 V min and 0.8 V max at IC=10 mA, VCE=5 V.






Parameters:

Technical/Catalog InformationMPS8599
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MPS8599
MPS8599



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