MPS8097

Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Packaging :
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92


Description

The MPS8097 is a kind of NPN silicon planar epitaxial amplifier transistor. There are some features as follows: (1)collector-emitter voltage: VCEO=40 V; (2)collector dissipation: PC(max)=625 mW.

What comes next is about the absolute maximum ratings at Ta=25 of MPS8097: (1)collector to base voltage, VCBO: 60 V; (2)collector to emitter voltage, VCEO: 40 V; (3)emitter to base voltage, VEBO: 6 V; (4)collector current, IC: 200 mA; (5)collector dissipation, PC: 625 mW; (6)junction temperature, TJ: 150; (7)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of MPS8097 at Ta=25: (1)collector-emitter breakdown voltage, BVCEO: 40 V min at IC=10 mA, IB=0; (2)collector cutoff current, ICBO: 30 nA max at VCB=40 V, IE=0; 10 nA max at VCB=60 V, IE=0; (3)emittor cutoff current, IEBO: 20 nA max at VBE=6 V, IC=0; (4)DC current gain, hFE: 250 min and 700 max at VCE=5 V, IC=100A; (5)output capacitance, Cob: 1 pF min and 4 pF max at VCB=5 V, f=1 MHz, IE=0; (6)base-emitter on voltage, VBE(on): 0.45 V min and 0.65 V max at IC=100 A, VCE=5 V; (7)noise figure, NF: 2 dB at IC=100 A, VCE=5 V, RS=10 K, f=10 Hz.