MPS8099

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 at 1 mA at 5 V
Maximum Operating Frequency : 150 MHz (Min)
Packaging : Bulk


Description

The MPS8099 is a kind of NPN silicon planar epitaxial amplifier transistor. There are some features as follows: (1)collector-emitter voltage: VCEO=80 V; (2)collector dissipation: P(max)=625 mW.

What comes next is about the absolute maximum ratings of MPS8099 at Ta=25: (1)collector to base voltage, VCBO: 80 V; (2)collector to emitter voltage, VCEO: 80 V; (3)emitter to base voltage, VEBO: 6 V; (4)collector current, IC: 500 mA; (5)collector dissipation, PC: 625 mW; (6)junction temperature, TJ: 150; (7)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of MPS8099 at Ta=25: (1)collector-base breakdown voltage, BVCBO: 80 V min at IC=100A, IE=0; (2)collector-emitter breakdown voltage, BVCEO: 80 V min at IC=10 mA, IB=0; (3)emitter-base breakdown voltage, BVEBO: 6 V min at IE=10A, IC=0; (4)collector cutoff current, ICBO: 100 nA max at VCB=80 V, IE=0; (5)emittor cutoff current, IEBO: 100 nA max at VEB=6 V, IC=0; (6)collector cutoff current, ICEO: 100 nA max at VCE=60 V, IE=0; (7)DC current gain, hFE: 100 min and 300 max at VCE=5 V, IC=1 mA; 100 min at IC=10 mA, VCE=5 V; 75 min at IC=100 mA, VCE=5 V; (8)current gain-bandwidth product, fT: 150 MHz min at VCE=5 V, IC=10 mA, f=100 MHz; (9)output capacitance, cob: 6 pF max at VCB=5 V, f=1 MHz, IE=0; (10)collector-emitter saturation voltage, VCE(sat): 0.4 V max at IC=100 mA, IB=5 mA and 0.3 V max at IC=10 mA, IB=5 mA; (11)base-emitter on voltage, VBE(on): 0.6 V min and 0.8 V max at IC=10 mA, VCE=5 V.