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MP4209(Q)

MOSFET MOD N-CH 100V 3A 10-SIP

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SeekIC No. : 003429978 Detail

MP4209(Q): MOSFET MOD N-CH 100V 3A 10-SIP

MP4209(Q) Data Sheet

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Part Number:
MP4209(Q)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25° C: 3A
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) @ Vds: 280pF @ 10V
Package / Case : SOT-143-4 Power - Max: 2W
Mounting Type: Through Hole Package / Case: 10-SIP
Supplier Device Package: 10-SIP (S-10)    

Description

FET Feature: Logic Level Gate
Series: -
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 3A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 1mA
Input Capacitance (Ciss) @ Vds: 280pF @ 10V
FET Type: 4 N-Channel (H-Bridge)
Mounting Type: Through Hole
Manufacturer: Toshiba
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V
Gate Charge (Qg) @ Vgs: 13.5nC @ 10V
Package / Case: 10-SIP
Supplier Device Package: 10-SIP (S-10)


Parameters:

Technical/Catalog InformationMP4209(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET Polarity*
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs350 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 280pF @ 10V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs13.5nC @ 10V
Package / Case10-SIP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MP4209 Q
MP4209Q



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