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SeekIC No. : 003429978 Detail

MP4209(Q): MOSFET MOD N-CH 100V 3A 10-SIP

MP4209(Q) Data Sheet

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Part Number:: MP4209(Q)
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/26

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What is this?

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Product Details

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Series:	-	Manufacturer:	Toshiba
FET Type:	4 N-Channel (H-Bridge)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	100V	Current - Continuous Drain (Id) @ 25° C:	3A
Rds On (Max) @ Id, Vgs:	350 mOhm @ 2A, 10V	Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) @ Vgs:	13.5nC @ 10V	Input Capacitance (Ciss) @ Vds:	280pF @ 10V
Package / Case :	SOT-143-4	Power - Max:	2W
Mounting Type:	Through Hole	Package / Case:	10-SIP
Supplier Device Package:	10-SIP (S-10)

Description

FET Feature: Logic Level Gate
Series: -
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 3A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 1mA
Input Capacitance (Ciss) @ Vds: 280pF @ 10V
FET Type: 4 N-Channel (H-Bridge)
Mounting Type: Through Hole
Manufacturer: Toshiba
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V
Gate Charge (Qg) @ Vgs: 13.5nC @ 10V
Package / Case: 10-SIP
Supplier Device Package: 10-SIP (S-10)

Parameters:

Technical/Catalog Information	MP4209(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	*
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 10V
Power - Max	2W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	13.5nC @ 10V
Package / Case	10-SIP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MP4209 Q MP4209Q

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MP4209(Q)

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